2002. 7. 16 1/3 semiconductor technical data ktc4370/a epitaxial planar npn transistor revision no : 2 high voltage application. features high transition frequency : f t =100mhz(typ.). complementary to kta1659/a. maximum rating (ta=25 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 ) note : h fe classification o:70~140, y:120~240 characteristic symbol rating unit collector-base voltage ktc4370 v cbo 160 v KTC4370A 180 collector-emitter voltage ktc4370 v ceo 160 v KTC4370A 180 emitter-base voltage v ebo 5 v collector current i c 1.5 a base current i b 0.15 a collector power dissipation (tc=25 ) p c 20 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =160v, i e =0 - - 1.0 a emitter cut-off current i ebo v eb =5v, i c =0 - - 1.0 a collector-emitter breakdown voltage ktc4370 v (br)ceo i c =10ma, i b =0 160 - - v KTC4370A 180 - - dc current gain h fe (note) v ce =5v, i c =100ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - - 1.5 v base-emitter voltage v be v ce =5v, i c =500ma - - 1.0 v transition frequency f t v ce =10v, i c =100ma - 100 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 25 - pf
2002. 7. 16 2/3 ktc4370/a revision no : 2 i - v cce ce collector-emitter voltage v (v) 04 20 2.0 c 0 collector current i (ma) 0.4 h - i fe c c collector current i (ma) 10 3 fe dc current gain h collector-emitter saturation ce(sat) 0.03 300 100 10 collector current i (ma) c c ce(sat) v - i collector current i (ma) 0 c 0.2 0 base-emitter voltage v (v) be be c i - v dc current gain h fe collector current i (ma) c c fe h - i 81216 1.2 1.6 0.8 common emitter ta=25 c i =0ma b common emitter v =5v ce ta=100 c t a =2 5 c ta=0 c 100 30 300 1k 2k common emitter ta=25 c v =2v ce voltage v (v) 530 1k3k 0.05 0.1 0.3 0.5 1.0 common emitter ta=25 c i /i =10 c b b c i /i =5 1 2 3 5 12 30 80 140 250 100 5 10 30 50 300 500 v =5v ce v =10v ce common emitter 3 5 10 30 100 50 10 100 30 300 300 500 tc=25 c 1k 2k v =5v v =10v ce ce ta=100 c ta=25 c ta= 0 c collector current i (ma) common emitter voltage v (v) collector-emitter saturation 510 ce(sat) i /i =10 ta=100 c 300 100 30 c 1k 3k v - i ce(sat) c 0.1 0.05 0.3 0.5 1.0 3.0 5.0 25 0 cb 0.4 0.6 0.8 1.0 1.2 1.4 200 400 600 800 1k 1.2k 1.4k 1.6k
2002. 7. 16 3/3 ktc4370/a revision no : 2 c - v cb collector-base voltage v (v) ob 1 collector output capacitance ob cb c (pf) 3 5 10 30 50 100 i =0 f=1mhz tc=25 c e 0.5 1 3 5 10 30 50 100 200 f - i c collector current i (ma) t transition frequency f (mhz) tc 10 30 50 100 300 500 common emitter tc=25 c v =2v ce 2 5 10 30 50 100 300 500 v =5v ce safe operating area ce collector-emitter voltage v (v) 35 10 30 0.01 c collector current i (a) i max(pulsed) c * c i max v max. ceo 100 300 50 0.03 0.05 0.1 0.3 0.5 1 3 5 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * (continuous) dc operation * 500ms 100ms * 10ms * * 1ms thermal limited s/b limited v max=160v ktc4370 ceo v max=180v KTC4370A ceo ambient temperature ta ( c) collector power dissipation p (w) 0 0 pc - ta 20 40 60 80 100 5 10 15 20 140 120 160 c 25 tc=ta infinite heat sink no heat sink 1 1 2 2
|
